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1

Architectural strategies in standard-cell design for the 7 nm and beyond technology node

Sherazi, Syed Muhammad Yasser, Chava, Bharani, Debacker, Peter, Bardon, Marie Garcia, Schuddinck, Pieter, Firouzi, Farshad, Raghavan, Praveen, Mercha, Abdelkarim, Verkest, Diederik, Ryckaert, Julien

Journal:

Journal of Micro/Nanolithography MEMS and MOEMS

Year:

2016

Language:

english

File:

PDF, 6.11 MB

english, 2016

2

Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation

K. Hayama, K. Takakura, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2005

Language:

english

File:

PDF, 1.80 MB

english, 2005

3

Vertical GAAFETs for the Ultimate CMOS Scaling

Yakimets, Dmitry, Eneman, Geert, Schuddinck, Pieter, Bao, Trong Huynh, Bardon, Marie Garcia, Raghavan, Praveen, Veloso, Anabela, Collaert, Nadine, Mercha, Abdelkarim, Verkest, Diederik, Thean, Aaron V

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 4.24 MB

english, 2015

4

Improving the prevention of fall from height in construction sites through the combination of technologies

MerchÃ¡n, MarÃa del Carmen Rey-, GÃ³mez-de-Gabriel, JesÃºs M., FernÃ¡ndez-Madrigal, Juan-Antonio, LÃ³pez-Arquillos, Antonio

Journal:

International Journal of Occupational Safety and Ergonomics

Year:

2020

File:

PDF, 977 KB

2020

5

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs

K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J.M. Rafí, A. Mercha, E. Simoen, C. Claeys

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 400 KB

english, 2005

6

Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs

J.M. Rafí, E. Simoen, A. Mercha, N. Collaert, K. Hayama, F. Campabadal, C. Claeys

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 3.86 MB

english, 2007

7

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients

K. Hayama, K. Takakura, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 452 KB

english, 2008

8

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

J.M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 517 KB

english, 2006

9

Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors

A Mercha, J Rhayem, L Pichon, M Valenza, J.M Routoure, R Carin, O Bonnaud, D Rigaud

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 361 KB

english, 2000

10

Low-frequency noise behavior of SiO2--HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

Simoen, E., Mercha, A., Pantisano, L., Claeys, C., Young, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 282 KB

english, 2004

11

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk?

Chiarella, T., Witters, L., Mercha, A., Kerner, C., Dittrich, R., Rakowski, M., Ortolland, C., Ragnarsson, L.-A., Parvais, B., De Keersgieter, A., Kubicek, S., Redolfi, A., Rooyackers, R., Vrancken, C

Year:

2009

Language:

english

File:

PDF, 1.67 MB

english, 2009

12

[IEEE Tutorial (ICICDT) - Grenoble, France (2008.06.2-2008.06.4)] 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial - Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length

Collaert, N., von Arnim, K., Rooyackers, R., Vandeweyer, T., Mercha, A., Parvais, B., Witters, L., Nackaerts, A., Altamirano Sanchez, E., Demand, M., Hikavyy, A., Demuynck, S., Devriendt, K., Bauer, F

Year:

2008

Language:

english

File:

PDF, 475 KB

english, 2008

13

[IEEE ESSDERC 2014 - 44th European Solid State Device Research Conference - Venice Lido, Italy (2014.9.22-2014.9.26)] 2014 44th European Solid State Device Research Conference (ESSDERC) - Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies

Bao, T. Huynh, Yakimets, D., Ryckaert, J., Ciofi, I., Baert, R., Veloso, A., Boemmels, J., Collaert, N., Roussel, P., Demuynck, S., Raghavan, P., Mercha, A., Tokei, Z., Verkest, D., Thean, A. V-Y., Wa

Year:

2014

Language:

english

File:

PDF, 3.66 MB

english, 2014

14

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - PSP-based compact FinFET model describing dc and RF measurements

Smit, G.D.J., Scholten, A.J., Serra, N., Pijper, R.M.T., van Langevelde, R., Mercha, A., Gildenblat, G., Klaassen, D.B.M.

Year:

2006

Language:

english

File:

PDF, 3.54 MB

english, 2006

15

[IEEE 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010 - Paris, France (2010.05.30-2010.06.2)] Proceedings of 2010 IEEE International Symposium on Circuits and Systems - 45-nm Planar bulk-CMOS 23-GHz LNAs with high-Q above-IC inductors

Wang, Wen-Chieh, Huang, Zue-Der, Carchon, Geert, Mercha, Abdelkarim, Decoutere, Stefaan, De Raedt, Walter, Wu, Chung-Yu

Year:

2010

Language:

english

File:

PDF, 684 KB

english, 2010

16

[IEEE 2015 International Conference on IC Design & Technology (ICICDT) - Leuven, Belgium (2015.6.1-2015.6.3)] 2015 International Conference on IC Design & Technology (ICICDT) - Design technology co-optimization for enabling 5nm gate-all-around nanowire 6T SRAM

Huynh-Bao, Trong, Sakhare, Sushil, Ryckaert, Julien, Yakimets, Dmitry, Mercha, Abdelkarim, Verkest, Diederik, Thean, Aaron Voon-Yew, Wambacq, Piet

Year:

2015

Language:

english

File:

PDF, 748 KB

english, 2015

17

[IEEE 2015 International Conference on IC Design & Technology (ICICDT) - Leuven, Belgium (2015.6.1-2015.6.3)] 2015 International Conference on IC Design & Technology (ICICDT) - Dimensioning for power and performance under 10nm: The limits of FinFETs scaling

Bardon, M. Garcia, Schuddinck, P., Raghavan, P., Jang, D., Yakimets, D., Mercha, A., Verkest, D., Thean, A.

Year:

2015

Language:

english

File:

PDF, 3.23 MB

english, 2015

18

Virtual Reality to Foster Social Integration by Allowing Wheelchair Users to Tour Complex Archaeological Sites Realistically

PÃ©rez, Emiliano, MerchÃ¡n, Pilar, MerchÃ¡n, MarÃa JosÃ©, Salamanca, Santiago

Journal:

Year:

2020

File:

PDF, 5.65 MB

2020

19

Revenue management in last-mile delivery: state-of-the-art and future research directions

Snoeck, AndrÃ©, MerchÃ¡n, Daniel, Winkenbach, Matthias

Journal:

Transportation Research Procedia

Year:

2020

File:

PDF, 266 KB

2020

20

DLL3 as a candidate gene for vertebral malformations

Philip F. Giampietro, Cathleen L. Raggio, Cory Reynolds, Nader Ghebranious, James K. Burmester, Ingrid Glurich, Kristen Rasmussen, Elizabeth McPherson, Richard M. Pauli, Sanjay K. Shukla, Sajid Mercha

Journal:

American Journal of Medical Genetics Part A

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

21

High-temperature performance of state-of-the-art triple-gate transistors

K. Akarvardar, A. Mercha, E. Simoen, V. Subramanian, C. Claeys, P. Gentil, S. Cristoloveanu

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 378 KB

english, 2007

22

Radiation damage in proton-irradiated strained Si n-MOSFETs

K. Hayama, K. Takakura, T. Ohtani, T. Kudou, H. Ohyama, A. Mercha, E. Simoen, C. Claeys

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 337 KB

english, 2008

23

Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs

K. Hayama, K. Takakura, H. Ohyama, J.M. Rafí, A. Mercha, E. Simoen, C. Claeys

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 175 KB

english, 2006

24

Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

P. Magnone, V. Subramanian, B. Parvais, A. Mercha, C. Pace, M. Dehan, S. Decoutere, G. Groeseneken, F. Crupi, S. Pierro

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 208 KB

english, 2008

25

Tunneling 1/fγ noise in 5 nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs

E. Simoen, A. Mercha, L. Pantisano, C. Claeys, E. Young

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 439 KB

english, 2005

26

Scalable and multibias high frequency modeling of multi-fin FETs

G. Crupi, D. Schreurs, B. Parvais, A. Caddemi, A. Mercha, S. Decoutere

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

27

Low-frequency noise in silicon-on-insulator devices and technologies

E. Simoen, A. Mercha, C. Claeys, N. Lukyanchikova

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 609 KB

english, 2007

28

Analytical extraction of small and large signal models for FinFET varactors

Giovanni Crupi, Dominique M.M.-P. Schreurs, Morin Dehan, Dongping Xiao, Alina Caddemi, Abdelkarim Mercha, Stefaan Decoutere

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 187 KB

english, 2008

29

Multi-gate devices for the 32 nm technology node and beyond

N. Collaert, A. De Keersgieter, A. Dixit, I. Ferain, L.-S. Lai, D. Lenoble, A. Mercha, A. Nackaerts, B.J. Pawlak, R. Rooyackers, T. Schulz, K.T. San, N.J. Son, M.J.H. Van Dal, P. Verheyen, K. von Arni

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 949 KB

english, 2008

30

Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

M. Rodrigues, J.A. Martino, A. Mercha, N. Collaert, E. Simoen, C. Claeys

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 605 KB

english, 2010

31

Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise

A. Mercha, L. Pichon, R. Carin, K. Mourgues, O. Bonnaud

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 120 KB

english, 2001

32

Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J.M. Rafí, A. Mercha, E. Simoen, C. Claeys

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 299 KB

english, 2006

33

Impact of fin width on digital and analog performances of n-FinFETs

V. Subramanian, A. Mercha, B. Parvais, J. Loo, C. Gustin, M. Dehan, N. Collaert, M. Jurczak, G. Groeseneken, W. Sansen, S. Decoutere

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1010 KB

english, 2007

34

Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs

W. Guo, B. Cretu, J.-M. Routoure, R. Carin, E. Simoen, A. Mercha, N. Collaert, S. Put, C. Claeys

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 766 KB

english, 2008

35

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

T. Chiarella, L. Witters, A. Mercha, C. Kerner, M. Rakowski, C. Ortolland, L.-Å. Ragnarsson, B. Parvais, A. De Keersgieter, S. Kubicek, A. Redolfi, C. Vrancken, S. Brus, A. Lauwers, P. Absil, S. Biese

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.79 MB

english, 2010

36

Microwave noise modeling of FinFETs

Giovanni Crupi, Alina Caddemi, Dominique M.M.-P. Schreurs, Wojciech Wiatr, Abdelkarim Mercha

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

37

Impact of line width roughness on the matching performances of next-generation devices

C. Gustin, L.H.A. Leunissen, A. Mercha, S. Decoutere, G. Lorusso

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 964 KB

english, 2008

38

Ab initio determination of the ionization potentials of water clusters (H2O)n (n = 2−6)

Segarra-Martí, Javier, Merchán, Manuela, Roca-Sanjuán, Daniel

Journal:

The Journal of Chemical Physics

Year:

2012

Language:

english

File:

PDF, 1.61 MB

english, 2012

39

Low frequency noise characterization in n-channel FinFETs

R. Talmat, H. Achour, B. Cretu, J.-M. Routoure, A. Benfdila, R. Carin, N. Collaert, A. Mercha, E. Simoen, C. Claeys

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 558 KB

english, 2012

40

The 1/f1.7 noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide

Lukyanchikova, N., Petrichuk, M., Garbar, N., Simoen, E., Mercha, A., Claeys, C., van Meer, H., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 400 KB

english, 2002

41

Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs

Mercha, A., Simoen, E., Claeys, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 504 KB

english, 2003

42

Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Vaidy Subramanian, Bertrand Parvais, Jonathan Borremans, Abdelkarim Mercha, Dimitri Linten, Piet Wambacq, Josine Loo, Morin Dehan, Cedric Gustin, Nadine Collaert, Stefan Kubicek, Robert Lander, Jacob

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 473 KB

english, 2006

43

Double-Gate finFETs as a CMOS Technology Downscaling Option: An RF Perspective

Sebastien Nuttinck, Bertrand Parvais, Gilberto Curatola, Abdelkarim Mercha

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 520 KB

english, 2007

44

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

Akarvardar, K., Mercha, A., Cristoloveanu, S., Gentil, P., Simoen, E., Subramanian, V., Claeys, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.05 MB

english, 2007

45

[IEEE 2010 IEEE Custom Integrated Circuits Conference -CICC 2010 - San Jose, CA, USA (2010.09.19-2010.09.22)] IEEE Custom Integrated Circuits Conference 2010 - Verifying electrical/thermal/thermo-mechanical behavior of a 3D stack - Challenges and solutions

Van der Plas, Geert, Thijs, Steven, Linten, Dimitri, Katti, Guruprasad, Limaye, Paresh, Mercha, Abdelkarim, Stucchi, Michele, Oprins, Herman, Vandevelde, Bart, Minas, Nikolas, Cupac, Miro, Dehan, Mori

Year:

2010

Language:

english

File:

PDF, 877 KB

english, 2010

46

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Claeys, C., Mercha, A., Simoen, E.

Journal:

Journal of The Electrochemical Society

Year:

2004

Language:

english

File:

PDF, 467 KB

english, 2004

47

Singlet−Triplet States Interaction Regions in DNA/RNA Nucleobase Hypersurfaces

González-Luque, Remedios, Climent, Teresa, González-Ramírez, Israel, Merchán, Manuela, Serrano-Andrés, Luis

Journal:

Journal of Chemical Theory and Computation

Year:

2010

Language:

english

File:

PDF, 1.81 MB

english, 2010

48

DC and low frequency noise performances of SOI p-FinFETs at very low temperature

Achour, H., Talmat, R., Cretu, B., Routoure, J.-M., Benfdila, A., Carin, R., Collaert, N., Simoen, E., Mercha, A., Claey, C.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.79 MB

english, 2013

49

[IEEE 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Grenoble, France (2014.6.30-2014.7.3)] 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Comparative study of a fully differential op amp in FinFET and planar technologies

Morrison, Sebastien, Parvais, Bertrand, Vandersteen, Gerd, Miyaguchi, Kenichi, Mercha, Abdelkarim, Wambacq, Piet

Year:

2014

Language:

english

File:

PDF, 644 KB

english, 2014

50

[IEEE 2007 IEEE Custom Integrated Circuits Conference - San Jose, CA, USA (2007.09.16-2007.09.19)] 2007 IEEE Custom Integrated Circuits Conference - An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs

Parvais, B., Hu, S., Dehan, M., Mercha, A., Decoutere, S.

Year:

2007

Language:

english

File:

PDF, 1.45 MB

english, 2007

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